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High-density carrier doping and insulator—metal transition in two-dimensional semiconductor C10–DNTT

Daisuke Yamanaka 1, @ , Naotaka Kasuya 1, @ , Toshihiro Okamoto 1, 2, @ , Hideaki Takayanagi 1, @ , Shun Watanabe 1, @ , Jun Takeya 1, 2, 3, *, @

1 : Graduate School of Frontier Sciences, The University of Tokyo

2 : CREST, Japan Science and Technology Agency

3 : MANA, National Institute for Materials Science

* : Corresponding author

Subject :	:	poster
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